| Product name | Product No. | Properties | Unit | Lead time | |||||||||||||||
| positive photoresists, DPR-i5500, 1gallon Synonyms : 포토레지스트; | DPR-i5500 | 점도 = 11cP resist thickness = 10,950Å Eop pf 1.0mm L/S = 118 mJ/cm2 1.0mm grouped line DOF : >1.8µm resolution limit : 0.6µm exposure latitude (1.0mm L/S) = 45% experiment condition substrate : Si (HMDS treatment) spin coating : DMS-300 film thickness : 10,950Å pre-bake : 90℃ / 60sec exposure : NSR-i9C MCS2 (Nikon) NA = 0.57 conventional post exposure bake : 110℃ / 60sec development : TMAH 2.38% aq. 60sec puddle | 1gallon | 주문 후 1주 소요 | |||||||||||||||
| Product name | Product No. | Properties | Unit | Lead time | |||||||||||||||
| positive photoresists, DPR-i5500, 1gallon Synonyms : 포토레지스트; | DPR-i5500 | 점도 = 11cP resist thickness = 10,950Å Eop pf 1.0mm L/S = 118 mJ/cm2 1.0mm grouped line DOF : >1.8µm resolution limit : 0.6µm exposure latitude (1.0mm L/S) = 45% experiment condition substrate : Si (HMDS treatment) spin coating : DMS-300 film thickness : 10,950Å pre-bake : 90℃ / 60sec exposure : NSR-i9C MCS2 (Nikon) NA = 0.57 conventional post exposure bake : 110℃ / 60sec development : TMAH 2.38% aq. 60sec puddle | 1gallon | 주문 후 1주 소요 | |||||||||||||||
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